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IRF640NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640PBF

18A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF640PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640PBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF640PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640S

N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF640NSTRLHR

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R

  • 功能描述：

    TRANS MOSFET N-CH 200V 18A 3PIN D2PAK - Tape and Reel

  • 功能描述：

    Single N-Channel 200 V 150 W 67nC Hexfet Power Mosfet Surface Mount - D2PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
24+
1600
全新原裝現(xiàn)貨庫(kù)存
 詢價(jià)
IR
23+
N/A
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
N/A
7000
詢價(jià)
IR
22+
TO263
20000
保證原裝正品,假一陪十
 詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
2023+
TO263
566
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
INFINEON
TO263
22+/23+
10000
原裝正品 價(jià)格優(yōu)勢(shì)
 詢價(jià)
DISCRETE
800
IR
20800
詢價(jià)
IR
1237+
TO-263
1600
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
更多IRF640NSTRLHR供應(yīng)商 更新時(shí)間2025-2-10 14:03:00

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