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IRF82

N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWICHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS,MOTORCONTROL,LIGHTINGFORINDUSTRIALANDCONSUMERENVIRONMENT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF820

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF820

N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF820

N-CHANNEL POWER MOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF820

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF820

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRF820

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF820

20A 600V N CHANNEL POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF820-220

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820-220FP

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820-251

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820-252

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820A

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCu

IRF

International Rectifier

IRF820A

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820A

N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?LowRDS(on)=2.0Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF820AL

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalanch

IRF

International Rectifier

IRF820AL

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF82

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
98
25
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
ST
2015+
SO220
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
VIS
2020+
TO-220
10110
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
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IR
24+
D2-Pak
8866
詢價(jià)
IR
17+
TO-220
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IR
DIP
1200
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
ST
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
2339+
TO-220
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
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更多IRF82供應(yīng)商 更新時(shí)間2025-1-7 18:15:00

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