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IRFI064

TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)

HEXFET?TRANSISTORN-CHANNEL AVALANCHEENERGYRATEDANDdv/dtRATED 60Volts,0.017OhmHEXFET

IRF

International Rectifier

IRFI064

Simple Drive Requirements

IRF

International Rectifier

IRFI064_15

Simple Drive Requirements

IRF

International Rectifier

IRFM064

POWERMOSFETTHRU-HOLE(TO-254AA)

IRF

International Rectifier

IRFM064

SimpleDriveRequirements

IRF

International Rectifier

IRFP064

PowerMOSFET(Vdss=60V,Rds(on)=0.009ohm,Id=70*A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP064

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP064

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Ultralowon-resistance ?Verylowthermalresistance ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9991

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP064N

PowerMOSFET(Vdss=55V,Rds(on)=0.008ohm,Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne

IRF

International Rectifier

IRFP064N

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFP064N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP064N

類型：N溝道漏源電壓(Vdss)：55V連續(xù)漏極電流(Id)：110A功率(Pd)：200W導(dǎo)通電阻(RDS(on)@Vgs,Id)：8mΩ@10V,59AN溝道,55V,110A,8mΩ@10V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PDF上傳者：深圳市亞泰盈科電子有限公司

IRFP064N

N-ChannelMOSFET

Description TheTO-247packageispreferredforcommercial-industrial applicationswherehigherpowerlevelsprecludetheuseof TO-220devices.TheTO-247issimilarbutsuperiortothe earlierTO-218packagebecauseofitsisolatedmounting hole. AdvancedProcessTechnology UltraLow

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFP064NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP064NPBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFI064

  • 制造商：

    International Rectifier

  • 功能描述：

    TRANS MOSFET N-CH 60V 45A 3PIN TO-259AA - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
CHINA
22+
TO-259AA
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價
IR
22+
TO-259AA
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-259AA
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-259AA
7000
詢價
IR
23+24
TO-222
59630
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管
 詢價
IR
23+
TO-220F
35890
詢價
IR
15+
TO-220F
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
IR
21+
TO220-3
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多IRFI064供應(yīng)商 更新時間2025-1-7 15:55:00

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