首頁(yè) >IRFI4410ZPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFI4410ZPBF | High Efficiency Synchronous Rectification in SMPS | IRF International Rectifier | IRF | |
IRFI4410ZPBF | High Efficiency Synchronous Rectification in SMPS | IRF International Rectifier | IRF | |
IRFI4410ZPBF | High Efficiency Synchronous Rectification in SMPS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
High Efficiency Synchronous Rectification in SMPS | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
100VN-ChannelMOSFET Benefits *ImprovedGate,AvalancheandDynamicdV/dt Ruggedness *FullyCharacterizedCapacitanceandAvalanche SOA *EnhancedbodydiodedV/dtanddI/dtCapability *Lead-Free *RoHSCompliant,Halogen-Free *VDS=100V *ID(atVGS=10V)=97A *RDS(ON)(atVGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow | IRF International Rectifier | IRF | ||
ISOSMARTHalfBridgeDriverChipset TheIXBD4410/IXBD4411ISOSMARTchipsetisdesignedtocontrolthegatesoftwoPowerMOSFETsorPowerIGBTsthatareconnectedinahalfbridge(phase-leg)configurationfordrivingmultiple-phasemotors,orusedinapplicationsthatrequirehalf-bridgepowercircuits.TheIXBD4410/IXBD4411isaf | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào):
IRFI4410ZPBF
- 功能描述:
MOSFET MOSFT 100V 65A 9.3mOhm 83nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
TO-220AB 整包 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢(xún)價(jià) | ||
IR |
15+ |
原廠(chǎng)原裝 |
7000 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-220 |
49 |
只做原廠(chǎng)渠道 可追溯貨源 |
詢(xún)價(jià) | ||
INFINEON |
22+ |
TO-220 |
11385 |
原裝正品,實(shí)單請(qǐng)聯(lián)系 |
詢(xún)價(jià) | ||
IR |
22+ |
TO-220F |
13568 |
實(shí)力現(xiàn)貨,隨便驗(yàn)! |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-220F |
9203 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
DISCRETE |
50 |
IR |
7000 |
詢(xún)價(jià) | |||
IR |
17+ |
TO-220F |
6200 |
詢(xún)價(jià) | |||
IOR |
2020+ |
TO220 |
44 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) |
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