零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR020 | HEXFETR Power MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq | IRF International Rectifier | IRF | |
IRFR020 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFR020 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR020 | Power MOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFR020 | N-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | |
IRFR020 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IRFR020 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFR020 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Power MOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
IRFR020
- 功能描述:
MOSFET N-Chan 60V 14 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
2131 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
24+ |
TO 252 |
161321 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
TO-252 |
501763 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
IR |
23+ |
D-PAK |
12335 |
詢價(jià) | |||
IR |
17+ |
TO-252 |
6200 |
詢價(jià) | |||
IR |
24+ |
TO-3 |
150 |
詢價(jià) | |||
IR |
06+ |
TO-252 |
15000 |
原裝庫(kù)存 |
詢價(jià) | ||
VISHAY |
23+ |
D2Pak |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IR |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
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