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IRFR3303PBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFR3303PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR3303)
● Straight Lead (IRFU3033)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR3303PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
17+15 |
TO252 |
13784 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IOR |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
23+ |
NA/ |
18000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
20+ |
DPAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
TO252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
21+ |
TO252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
15+ |
TO-252 |
7487 |
現(xiàn)貨 |
詢價 | ||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
23+ |
TO252 |
5000 |
原裝正品現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO252 |
9000 |
原裝正品 |
詢價 |
