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IS43DR81280

1Gb (x8, x16) DDR2 SDRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B

1.8V DDR2 SDRAM

·Single supply voltage of 1.8V ± 0.1V\n·SSTL_18 compatible inputs\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency of 3, 4, 5 or 6\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Off-Chip Driver Impedance Adjustment)\n·ODT (On Die Termination) s;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25DBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25EBL

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25EBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBL

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280A

1Gb (x8, x16) DDR2 SDRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B

1Gb (x8, x16) DDR2 SDRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI
供應(yīng)商型號品牌批號封裝庫存備注價格
ISSI
23+
60-TWBGA(8x13.65)
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
原裝ISSI
24+
BGA
5000
只做原裝公司現(xiàn)貨
 詢價
ISSI
1728+
?
8450
只做原裝進(jìn)口,假一罰十
 詢價
ISSI
24+
FBGA60
12000
專營ISSI進(jìn)口原裝正品假一賠十可開17增值稅票
 詢價
ISSI
23+
FBGA
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ISSI
18+
TSOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
ISSI
1844+
FBGA60
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
ISSI(美國芯成)
21+
FBGA
12588
原裝正品,自己庫存
 詢價
ISSI
三年內(nèi)
1983
只做原裝正品
 詢價
ISSI/矽成
1141
DDR2SDRAM/128MX8DDR2/DDR
10
原裝香港現(xiàn)貨真實庫存。低價
 詢價
更多IS43DR81280供應(yīng)商 更新時間2025-8-2 16:31:00

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