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IXFK180N10

Single MOSFET Die

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

IXFK180N10_09

HiperFET Power MOSFETs

IXYS

IXYS Corporation

IXFN180N10

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·SynchronousRectification ·LowVoltagerelays ·BatteryChargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN180N10

PowerMOSFET

IXYS

IXYS Corporation

IXFN180N10

HiPerFETPowerMOSFETSingleMOSFETDie

HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackage ?miniBLOC,withAluminiumNitrideIsolation ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowRDS(on) ?LowDrain-to-TabCapacitan

IXYS

IXYS Corporation

IXFR180N10

HiPerFETPowerMOSFETsISOPLUS247

VDSS=100V ID25=165A RDS(on)=8m? trr≤250ns SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX180N10

HiperFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK180N10

  • 功能描述：

    MOSFET 100V 180A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
320
詢價
IXY
06+
TO-3PL
500
原裝庫存
 詢價
IXYS
23+
管3PL
5000
原裝正品,假一罰十
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
SMD
5500
長期供應原裝現(xiàn)貨實單可談
 詢價
IXYS
20+
TO-3L
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
2020+
TO-264
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IXYS
2023+
TO-3L
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
186
詢價
更多IXFK180N10供應商 更新時間2025-1-24 15:30:00

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