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IXFN100N25

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

HiPerFETPowerMOSFETs SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFR100N25

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowd

IXYS

IXYS Corporation

IXFR100N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX100N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX100N25

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXTK100N25P

PolarHTPowerMOSFETN-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTK100N25P

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ（max）@VGS=10V ·UnclampedInductiveSwitching APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ100N25P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ100N25P

PolarHTPowerMOSFETN-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTT100N25P

PolarHTPowerMOSFETN-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFN100N25

  • 功能描述：

    MOSFET 100 Amps 250V 0.027 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
 詢價
IXYS
23+
MOSFETN-CH250V100ASOT-22
1690
專業(yè)代理銷售半導體模塊,能提供更多數(shù)量
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
IXYS
2023+
MODULE
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IXYS
24+
2173
公司大量全新正品 隨時可以發(fā)貨
 詢價
IXYS
24+
SOT227
110
詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
SOT-227
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
更多IXFN100N25供應商 更新時間2025-1-28 13:02:00

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