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IXGH25N100A

Low VCE(sat), High speed IGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXGH25N100A

Low V High speed IGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXGH25N100A

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1000V 50A 200W TO247AD

IXYS

IXYS Corporation

IXGH25N100AU1

High speed IGBT with Diode

Features ●InternationalstandardpackageJEDECTO-247AD ●IGBTandanti-parallelFREDinonepackage ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forminimumon-stateconductionlosses ●MOSGateturn-on -drivesimplicity ●FastRecoveryEpitaxialDiode(FRED) -softreco

IXYS

IXYS Corporation

IXGH25N100AU1

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1000V 50A 200W TO247AD

IXYS

IXYS Corporation

IXGM25N100

LowVHighspeedIGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXGM25N100

LowVCE(sat),HighspeedIGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXGM25N100A

LowVHighspeedIGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXGM25N100A

LowVCE(sat),HighspeedIGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

IXYS

IXYS Corporation

IXSH25N100

LowVCE(sat)IGBT,HighSpeedIGBT

IXYS

IXYS Corporation

IXSH25N100A

LowVCE(sat)IGBT,HighSpeedIGBT

IXYS

IXYS Corporation

IXSM25N100

LowVCE(sat)IGBT,HighSpeedIGBT

IXYS

IXYS Corporation

IXSM25N100A

LowVCE(sat)IGBT,HighSpeedIGBT

IXYS

IXYS Corporation

RM25N100DF

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=100V,ID=25A RDS(ON)25mΩ@VGS=10V RDS(ON)38mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

RECTRON

Rectron Semiconductor

RMD25N100DFV

N-ChannelEnhancementModePowerMOSFET

Feature 100V,25A Rds(on)

RECTRON

Rectron Semiconductor

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IXGH25N100A

  • 制造商:

    IXYS

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    4V @ 15V,25A

  • 開關(guān)能量:

    5mJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時 Td(開/關(guān))值:

    100ns/500ns

  • 測試條件:

    800V,25A,33 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AD

  • 描述:

    IGBT 1000V 50A 200W TO247AD

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD-3
8866
詢價
IXYS
23+
TO-247
3000
全新原裝
詢價
IXYS
23+
TO-3P
5000
原裝正品,假一罰十
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
22+23+
TO-247
15217
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
IXYS
2020+
TO-247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
1377
詢價
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
詢價
更多IXGH25N100A供應(yīng)商 更新時間2025-1-10 10:01:00