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IXTH30N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?M

IXYS

IXYS Corporation

IXTH30N50L

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-247packaging ?Withlowgatedriverequirements ?Lowswitchingloss ?Lowon-stateresistance ?Easytodrive ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

IXTH30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTQ30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

IXTQ30N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTT30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

IXTT30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTV30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTV30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTV30N50PS

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

LPM30N50

SingleN-Channel,30V,50A,PowerMOSFET

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

MTE30N50E

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.150OHM

ISOTOPTMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewenergydesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhig

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM30N50

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive ·DC-DCconverter ·powerswitchandsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTY30N50

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.15OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號:

    IXGH30N50

  • 功能描述:

    TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
1300
詢價
IXYS/艾賽斯
23+
TO-247
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IXYS
24+
TO-247AD-3
8866
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
IXYS/艾賽斯
23+
TO-247-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IXYS/艾賽斯
21+
TO-247
10000
原裝現(xiàn)貨假一罰十
詢價
IXYS/艾賽斯
2022
TO-247-3
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
IXYS/艾賽斯
TO-247
22+
6000
十年配單,只做原裝
詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品,支持實單
詢價
更多IXGH30N50供應(yīng)商 更新時間2025-1-10 10:13:00