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IXTP01N100D

N-Channel, Depletion Mode High Voltage MOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXYS

IXYS Corporation

IXTP01N100D

High Voltage MOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXYS

IXYS Corporation

IXTP01N100D

Power MOSFET

IXYS

IXYS Corporation

IXTU01N100

HighVoltageMOSFETN-Channel,EnhancementMode

HighVoltageMOSFET N-Channel,EnhancementMode Features ?InternationalstandardpackagesJEDECTO-251AA,TO-252AA ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Levelshifting ?Triggers ?Solidstaterelays ?Currentre

IXYS

IXYS Corporation

IXTU01N100D

PowerMOSFET

IXYS

IXYS Corporation

IXTU01N100D

N-Channel,DepletionModeHighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXYS

IXYS Corporation

IXTY01N100

HighVoltageMOSFETN-Channel,EnhancementMode

HighVoltageMOSFET N-Channel,EnhancementMode Features ?InternationalstandardpackagesJEDECTO-251AA,TO-252AA ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Levelshifting ?Triggers ?Solidstaterelays ?Currentre

IXYS

IXYS Corporation

IXTY01N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTY01N100D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTY01N100D

PowerMOSFET

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXTP01N100D

  • 功能描述：

    MOSFET 0.1 Amps 1000V 110 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-220-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-220
40000
原裝正品 華強現(xiàn)貨
 詢價
IXYS
24+
TO-220
8866
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
IXYS
24+
TO-220
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IXYS
1931+
N/A
2629
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-220
10000
公司只做原裝正品
 詢價
更多IXTP01N100D供應(yīng)商 更新時間2025-1-24 14:14:00

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