首頁 >IXTP10P50P>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IXTP10P50P | PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High- | IXYS IXYS Corporation | IXYS | |
HighVoltagePowerSupplies | TDKTDK Corporation TDK株式會社東電化(中國)投資有限公司 | TDK | ||
PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High- | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan | IXYS IXYS Corporation | IXYS | ||
PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High- | IXYS IXYS Corporation | IXYS | ||
PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High- | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan | IXYS IXYS Corporation | IXYS | ||
MOSFETsSiliconN-ChannelMOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Reducedfootprintandvolumerequiredforsurgeprotection | Littelfuselittelfuse 力特力特公司 | Littelfuse |
詳細參數(shù)
- 型號:
IXTP10P50P
- 功能描述:
MOSFET -10.0 Amps -500V 1.000 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
IXYS |
23+ |
TO-220 |
9832 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
IXYS |
23+ |
TO-220 |
14100 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IXYS |
24+ |
TO-220 |
53 |
詢價 | |||
IXYS |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
IXYS |
23+ |
TO-220-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IXYS |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IXYS |
2022+ |
10 |
全新原裝 貨期兩周 |
詢價 | |||
IXYS |
1931+ |
N/A |
2003 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IXYS/艾賽斯 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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