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IXTQ10P50P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

FLX10P50

HighVoltagePowerSupplies

TDKTDK Corporation

TDK株式會(huì)社東電化（中國(guó)）投資有限公司

IXTA10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTH10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

IXTH10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

TK10P50W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10P50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

Littelfuselittelfuse

力特力特公司

WPP10P50K-F

Film/FoilPolypropyleneCapacitors

CDE

Cornell Dubilier Electronics

WPP10P50K-F

AxialLeadedHighFrequencyPulseCapacitors

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTQ10P50P

  • 功能描述：

    MOSFET -10.0 Amps -500V 1.000 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-3P
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
Littelfuse/IXYS
23+
TO-3P
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
IXYS
24+
TO-3P
95
詢價(jià)
IXYS
1931+
N/A
113
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-3P
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-3P
10000
公司只做原裝正品
 詢價(jià)
IXYS
22+
NA
113
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
23+
TO-3P
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多IXTQ10P50P供應(yīng)商 更新時(shí)間2025-1-10 17:19:00

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