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TK10P50W

Marking：TK10P50W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10P50W

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FLX10P50

HighVoltagePowerSupplies

TDKTDK Corporation

TDK株式會(huì)社東電化（中國(guó)）投資有限公司

IXTA10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTH10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

IXTH10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTQ10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

Littelfuselittelfuse

力特力特公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
XTW
24+
QFN
30348
絕對(duì)原廠(chǎng)支持只做自己現(xiàn)貨優(yōu)勢(shì)
 詢(xún)價(jià)
TOSHIBA/東芝
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
TOSHIBA/東芝
23+
NA/
7750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢(xún)價(jià)
TOSHIBA
10
詢(xún)價(jià)
TE
24+
SMD
121
C22-電阻器
 詢(xún)價(jià)
TOSHIBA
24+
con
10
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
 詢(xún)價(jià)
2017+
TO-252
28562
只做原裝正品假一賠十!
 詢(xún)價(jià)
TOSHIBA進(jìn)口
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
TOS
22+23+
TO-252
27053
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
TOSSHIB
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
更多TK10P50W供應(yīng)商 更新時(shí)間2025-1-25 13:26:00

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