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IXTQ26N50P

PolarHVTM Power MOSFET

IXYS

IXYS Corporation

IXTQ26N50P

PolarHV Power MOSFET

IXYS

IXYS Corporation

IXTQ26N50P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

26N50

26A,500VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC26N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCUnisonic Technologies

友順友順科技股份有限公司

IXFC26N50

HiPerFETMOSFETsISOPLUS220

ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFC26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC26N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC26N50P

PolarHVHiPerFETPowerMOSFETISOPLUS220

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters

IXYS

IXYS Corporation

IXFH26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH26N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXTQ26N50P

  • 功能描述：

    MOSFET 26.0 Amps 500 V 0.23 Ohm Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
2138+
TO-3P
6900
詢價
IXYS/艾賽斯
24+
TO-247
549
只做原廠渠道 可追溯貨源
 詢價
IXYS/艾賽斯
23+
TO-3P
25000
全新原裝現(xiàn)貨,假一賠十
 詢價
Littelfuse/IXYS
23+
TO-3P
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IXYS
17+
TO-3P
6200
詢價
IXYS
24+
TO-3P
8866
詢價
IXYS
2020+
TO-247
3551
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IXYS
1816+
TO-3P
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
IXYS
23+
TO-247
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IXYS
23+
TO-3P
5000
專做原裝正品,假一罰百!
 詢價
更多IXTQ26N50P供應商 更新時間2025-1-25 10:32:00

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