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K4E661611D中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4E661611D規(guī)格書詳情
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung￠s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
? Part Identification
- K4E661611D-TC(5.0V, 8K Ref.)
- K4E641611D-TC(5.0V, 4K Ref.)
? Active Power Dissipation
? Refresh Cycles
? Performance Range
? Extended Data Out Mode operation
? 2 CAS Byte/Word Read/Write operation
? CAS-before-RAS refresh capability
? RAS-only and Hidden refresh capability
? Fast parallel test mode capability
? TTL(5.0V) compatible inputs and outputs
? Early Write or output enable controlled write
? JEDEC Standard pinout
? Available in Plastic TSOP(II) package
? +5.0V±10 power supply
產(chǎn)品屬性
- 型號：
K4E661611D
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
NA/ |
4419 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
SAMSUNG/三星 |
19+ |
BGA |
12501 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||
SAMSUNG |
24+ |
BGA |
2140 |
全新原裝!現(xiàn)貨特價供應(yīng) |
詢價 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原裝正品支持實單 |
詢價 | ||
SAMSUNG/三星 |
BGA |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
SAMSUNG |
6000 |
面議 |
19 |
TSOP |
詢價 | ||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
SAMSUNG |
23+ |
BGA |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SAMSUNG/三星 |
23+ |
TSOP-50 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SAMSUNG |
2023+ |
BGA |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價 |
