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CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

TCH35P10ROJE

VeryLowInductanceDesign

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
OTHER/其它
21+
SOD523
90000
OTHER/其它 KIA35P10A SOD523 21+
 詢(xún)價(jià)
KIA 半導(dǎo)體
2112+
TO-252-2(DPAK)
105000
2500個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢(xún)價(jià)
KIA
23+
TO-252
13000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
KIA
23+
TO-252
28000
原裝正品
 詢(xún)價(jià)
KIA
23+
TO-252
12800
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢(xún)價(jià)
24+
N/A
53000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
KIA
23+
TO-252
2500
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
KIA
24+
TO-252
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持
 詢(xún)價(jià)
05+
原廠原裝
138
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
KIA
23+24
TO-220
16979
專(zhuān)業(yè)經(jīng)營(yíng)各種場(chǎng)效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢(xún)價(jià)
更多KIA35P10A供應(yīng)商 更新時(shí)間2025-2-9 8:30:00

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