LC35V256EM中文資料三洋數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Overview

The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well.

Features

? Supply voltage range: 3.0 to 3.6 V

? Access time: 70 ns (maximum)

? Standby current: 0.8 μA (Ta ≤ 60°C)

4.0 μA (Ta ≤ 70°C)

? Operating temperature: –10 to +70°C

? Data retention voltage: 2.0 to 3.6 V

? All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC)

? Input/output shared function pins, 3-state output pins

? No clock required (fully static circuits)

? Package

28-pin SOP (450 mil) plastic package:

LC35V256EM-70W

28-pin TSOP (8 × 13.4 mm) plastic package:

LC35V256ET-70W