MGP21N60E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGP21N60E規(guī)格書詳情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 65 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
? Low On–Voltage 2.15 V typical at 20 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號(hào)：
MGP21N60E
- 制造商：
ONSEMI
- 制造商全稱：
ON Semiconductor
- 功能描述：
Insulated Gate Bipolar Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TYCO/泰科 |
24+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
SIEMENS |
95+ |
SOP16 |
2900 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
SIEMENS |
SOP14 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
MGP |
2407+ |
SOP |
7750 |
原裝現(xiàn)貨!實(shí)單直說(shuō)!特價(jià)! |
詢價(jià) | ||
SIEMENS |
22+ |
SOP-14 |
5000 |
只做原裝,假一賠十 15118075546 |
詢價(jià) | ||
TYCO/泰科 |
22+ |
SMD |
71738 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON |
24+ |
90000 |
詢價(jià) | ||||
SIEMENS |
2023+ |
SOP14 |
3587 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
SIEMENS/西門子 |
22+ |
SOP14 |
14008 |
原裝正品 |
詢價(jià) |
