MGP21N60E中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書
MGP21N60E規(guī)格書詳情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 65 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
? Low On–Voltage 2.1 V typical at 20 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產品屬性
- 型號:
MGP21N60E
- 制造商:
ONSEMI
- 制造商全稱:
ON Semiconductor
- 功能描述:
Insulated Gate Bipolar Transistor
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TYCO/泰科 |
24+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
SIEMENS |
SOP14 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
MGP |
2407+ |
SOP |
7750 |
原裝現(xiàn)貨!實單直說!特價! |
詢價 | ||
TYCO/泰科 |
22+ |
SMD |
71738 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
ON |
24+ |
90000 |
詢價 | ||||
SIEMENS/西門子 |
22+ |
SOP14 |
14008 |
原裝正品 |
詢價 | ||
TYCO/泰科 |
22+ |
SMD |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
TYCO |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
TYCO/泰科 |
24+ |
SMD |
6000 |
只做原裝 |
詢價 |