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MJD112

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationsinPlastic

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD112

Complementary Darlington Power Transistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD112

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD117/L.

KECKEC CORPORATION

KEC株式會(huì)社

MJD112

D-PAK for Surface Mount Applications

Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD112

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andamplifiers.

DCCOM

Dc Components

MJD112

TO-251/TO-252-2 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●Complementarydarlingtonpowertransistors dpakforsurfacemountapplications

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

MJD112

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?HighDCcurrentgain ?Leadformedforsurfacemountapplications(NOsuffix) ?Straightlead(IPAK,“－I”suffix) ?Built-inadamperdiodeatE-C ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Desi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD112

Silicon NPN epitaxial planer Transistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighDCCurrentGain ?Built-inadamperdiode

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MJD112

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

Continental Device India Limited

詳細(xì)參數(shù)

  • 型號：

    MJD112

  • 功能描述：

    達(dá)林頓晶體管 2A 100V Bipolar

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 配置：

    Octal

  • 晶體管極性：

    NPN 集電極—發(fā)射極最大電壓

  • VCEO：

    50 V 發(fā)射極 - 基極電壓

  • VEBO：

    集電極—基極電壓

  • 最大直流電集電極電流：

    0.5 A

  • 最大工作溫度：

    + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-18

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON
24+
TO-252-2
85600
全新原裝現(xiàn)貨/假一罰百!
 詢價(jià)
長電
23+
TO-252
750000
一級分銷商
 詢價(jià)
CJ
23+
TO-252
7050
原廠原裝正品
 詢價(jià)
CJ/長電
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
ST/意法
24+
TO-252
504585
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
CJ(江蘇長電/長晶)
24+
SOD-323
11368
原廠原標(biāo)渠道現(xiàn)貨
 詢價(jià)
ON
23+
TO252
12335
詢價(jià)
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價(jià)
24+
SOT252
1000
詢價(jià)
ON
2016+
TO-252
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號可以免費(fèi)送樣品!
 詢價(jià)
更多MJD112供應(yīng)商 更新時(shí)間2025-6-18 16:13:00

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