MRF134分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.

? Guaranteed 28 Volt, 150 MHz Performance

Output Power = 5.0 Watts

Minimum Gain = 11 dB

Efficiency — 55 (Typical)

? Small–Signal and Large–Signal Characterization

? Typical Performance at 400 MHz, 28 Vdc, 5.0 W

Output = 10.6 dB Gain

? 100 Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

? Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz

? Excellent Thermal Stability, Ideally Suited For Class A

Operation