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BD6387EFV

HighPerformance,HighReliability36VSteppingMotorDriverSeries

ROHMRohm

羅姆羅姆半導體集團

EN6387B

BipolarTransistor-15V,-1.5A,LowVCE(sat),PNPSingleMCPH6

Features ?AdoptionofMBITprocesses ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage ?High-speedswitching ?Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.85mm) ?Highallowablepowerdissipation Applications ?Relaydrivers,l

ONSEMION Semiconductor

安森美半導體安森美半導體公司

L6387

HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER

HIGHVOLTAGERAILUPTO600V dV/dtIMMUNITY+-50V/nsecINFULLTEMPERATURERANGE DRIVERCURRENTCAPABILITY: 400mASOURCE, 650mASINK SWITCHINGTIMES50/30nsecRISE/FALL WITH1nFLOAD CMOS/TTLSCHMITTTRIGGERINPUTS WITHHYSTERESISANDPULLDOWN INTERNALBOOTSTRAPDIODE OUTPUTSINP

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

L6387

HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER

DESCRIPTION TheL6387isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

L6387D

HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER

DESCRIPTION TheL6387isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

L6387DTR

HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER

HIGHVOLTAGERAILUPTO600V dV/dtIMMUNITY+-50V/nsecINFULLTEMPERATURERANGE DRIVERCURRENTCAPABILITY: 400mASOURCE, 650mASINK SWITCHINGTIMES50/30nsecRISE/FALL WITH1nFLOAD CMOS/TTLSCHMITTTRIGGERINPUTS WITHHYSTERESISANDPULLDOWN INTERNALBOOTSTRAPDIODE OUTPUTSINP

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

L6387E

High-voltagehighandlowsidedriver

Description TheL6387Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.Thehighside(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputs

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

L6387ED

High-voltagehighandlowsidedriver

Description TheL6387Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.Thehighside(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputs

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MAX6387

SC70,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(μP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3μAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半導體

MAX6387

SC70/關(guān)DFN,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

MaximMaxim Integrated Products

美信美信半導體

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