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NAND512R3A2C集成電路(IC)的存儲器規(guī)格書PDF中文資料

NAND512R3A2C
廠商型號

NAND512R3A2C

參數(shù)屬性

NAND512R3A2C 封裝/外殼為63-TFBGA;包裝為管件;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

封裝外殼

63-TFBGA

文件大小

1.27065 Mbytes

頁面數(shù)量

51

生產(chǎn)廠商 numonyx
企業(yè)簡稱

NUMONYX

中文名稱

numonyx官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-6-10 17:10:00

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NAND512R3A2C規(guī)格書詳情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 μs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK? packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

產(chǎn)品屬性

  • 產(chǎn)品編號:

    NAND512R3A2CZA6E

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    管件

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術:

    閃存 - NAND

  • 存儲容量:

    512Mb(64M x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    50ns

  • 電壓 - 供電:

    1.7V ~ 1.95V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    63-TFBGA

  • 供應商器件封裝:

    63-VFBGA(9x11)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MICRON/美光
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
Micron Technology Inc.
21+
144-TFBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
STM
23+
BGA
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
詢價
STM
22+
BGA
22108
原裝正品現(xiàn)貨
詢價
ST/意法
2402+
BGA
8324
原裝正品!實單價優(yōu)!
詢價
WINBOND
2023+
BGA
65000
現(xiàn)貨原裝正品公司優(yōu)
詢價
ST
17+
BGA
6200
100%原裝正品現(xiàn)貨
詢價
ST
24+
BGA
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??!
詢價
ST/意法
25+
BGA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
Micron Technology Inc
23+/24+
63-TFBGA
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價