NVBG060N065SC1

Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V ?UltraLowGateCharge(QG(tot)=74nC) ?LowOutputCapacitance(Coss=133pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?RoHSCompliant TypicalApplications ?AutomotiveOnBoardChar

NVBG060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK?7L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie; ? High Junction Temperature (Tj = 175°C)\n? Higher system reliability\n? Kelvin Source Configuration\n? Low gate noise and switching loss\n? Ultra Low Gate Charge (QG(tot) = 74 nC)\n? Low switching loss\n? Low Output Capacitance (Coss = 133 pF)\n? Low switching loss\n? Zero reverse recovery current ;

NTBG060N065SC1

SiliconCarbide(SiC)MOSFET-44mohm,650V,M2,D2PAK-7L

Features ?Typ.RDS(on)=44m@VGS=18VTyp.RDS(on)=60m@VGS=15V ?UltraLowGateCharge(QG(tot)=74nC) ?LowOutputCapacitance(Coss=133pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) ?SolarInve

NTBL060N065SC1

SiliconCarbide(SiC)MOSFET-EliteSiC,44mohm,650V,M2,TOLL

Features ?Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V ?UltraLowGateCharge(QG(tot)=74nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=133pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSuppl

NTHL060N065SC1

SiliconCarbide(SiC)MOSFET–44mohm,650V,M2,TO-247-3L

Features ?Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V ?UltraLowGateCharge(QG(tot)=74nC) ?LowOutputCapacitance(Coss=133pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondle