首頁(yè) >NVHL020N120SC1>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NVHL020N120SC1 | Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=203nC) ?LowEffectiveOutputCapacitance(typ.Coss=260pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NVHL020N120SC1 | MOSFET - SiC Power, Single N-Channel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=203nC) ?LowEffectiveOutputCapacitance(typ.Coss=260pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SiliconCarbide,SingleN-Channel,D2PAK7L,1200V,98A,20mOhm | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,20m | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247-3LD |
100000 |
全新原裝 |
詢價(jià) | ||
ON |
24+ |
TO-247 |
6000 |
只做原裝正品,假一罰十! |
詢價(jià) | ||
onsemi |
24+ |
TO-247-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-247 |
2880 |
只做原廠原裝現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
ON(安森美) |
2023+ |
TO-247-3LD |
4550 |
全新原裝正品 |
詢價(jià) | ||
onsemi(安森美) |
23+ |
TO-247 |
8110 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
ON(安森美) |
23+ |
TO-247-3LD |
9379 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
ON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) |
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