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NXH003P120M3F2PTNG

Marking：NXH003P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH003P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf?bridgeandathermistorwithSi3N4DBCin anF2package. Features ?3m/1200VM3SSiCMOSFETHalf?Bridge ?Si3N4DBC ?Thermistor ?Pre?AppliedThermalInterfaceMaterial(TIM) ?Press?FitPins ?These

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH004P120M3F2PTHG

Marking：NXH004P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH004P120M3F2PTHGisapowermodulecontaining4m/ 1200VSiCMOSFEThalf?bridgeandathermistorwithHPSDBCin anF2package. Features ?4m/1200VM3SSiCMOSFETHalf?Bridge ?HPSDBC ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH004P120M3F2PTNG

Marking：NXH004P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH004P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf?bridgeandathermistorwithSi3N4DBCin anF2package. Features ?4m/1200VM3SSiCMOSFETHalf?Bridge ?Si3N4DBC ?Thermistor ?Pre?AppliedThermalInterfaceMaterial(TIM) ?Press?FitPins ?These

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH006P120M3F2PTHG

Marking：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH006P120M3F2PTHGisapowermodulecontaining6m/ 1200VSiCMOSFEThalf?bridgeandathermistorwithHPSDBCin anF2package. Features ?6m/1200VM3SSiCMOSFETHalf?Bridge ?HPSDBC ?Thermistor ?Pre?AppliedThermalInterfaceMaterial(TIM) ?Press?FitPins ?TheseDevic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH006P120MNF2PTG

Marking：NXH006P120MNF2PTG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

TheNXH006P120MNF2isapowermodulecontainingan6m/ 1200VSiCMOSFEThalf?bridgeandathermistorinanF2package. Features ?6m/1200VSiCMOSFETHalf?Bridge ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM ?OptionswithSo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH007F120M3F2PTHG

Marking：NXH007F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

TheNXH007F120M3F2PTHGisapowermodulecontaining 7m/1200VSiCMOSFETfull?bridgeandathermistorwithHPS DBCinanF2package. Features ?7m/1200VM3SSiCMOSFETFull?Bridge ?HPSDBC ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?Ap

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH008T120M3F2PTHG

Marking：NXH008T120M3F2PTHG；Package：F2-TNPC；Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

TheNXH008T120M3F2PTHGisapowermodulecontainingan 8m/1200VSiCMOSFETTNPCandathermistorwithHPSDBC inanF2package. Features ?8m/1200VM3SSiCMOSFETTNPC ?HPSDBC ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH010P120MNF1PG

Marking：NXH010P120MNF1PG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features ?10m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionsWithPre?AppliedThermalInterfaceMaterial(TIM)and WithoutPre?AppliedTIM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH010P120MNF1PG

Marking：NXH010P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features ?10m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionsWithPre?AppliedThermalInterfaceMaterial(TIM)and WithoutPre?AppliedTIM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH010P120MNF1PNG

Marking：NXH010P120MNF1PNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features ?10m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionsWithPre?AppliedThermalInterfaceMaterial(TIM)and WithoutPre?AppliedTIM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NX

  • 制造商：

    Hirose

  • 功能描述：

    902-0250-4-00 EACH

  • 功能描述：

    NX/3230-CAT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MICREL/麥瑞
23+
SOT143
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
TOSHIBA/東芝
22+
SOT-23
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
MINI
1849+
SOT-143
9852
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
FAIRCHILD
23+
24000
現(xiàn)貨庫存
 詢價(jià)
ADI/亞德諾
QFN
6698
詢價(jià)
LRC
22+
SOD-323
7278
原裝現(xiàn)貨
 詢價(jià)
ON/安森美
23+
SOT563
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON
22+
31032
原裝現(xiàn)貨 支持實(shí)單
 詢價(jià)
23+
SOP14
16567
正品:QQ;2987726803
 詢價(jià)
AR0134CSSM25SUEA0-DRBR1
240
原裝正品老板王磊+13925678267
 詢價(jià)
更多NX供應(yīng)商 更新時(shí)間2025-6-20 9:39:00

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