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NXH020U90MNF2PTG

Marking：NXH020U90MNF2PTG；Package：F2-VIENNA；Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package

TheNXH020U90MNF2isapowermodulecontainingaVienna Rectifiermoduleconsistingoftwo10m,900VSiCMOSFETs,two 100A,1200VSiCdiodesandathermistorinanF2package. Features ?NeutralPoint:10m,900VSiCMOSFETs ?BoostDiodes:100A,1200VSiCDiodes ?Thermistor ?P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040F120MNF1PG

Marking：NXH040F120MNF1PG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1package. Features ?40m/1200VSiCMOSFETHalf?Bridge ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM ?Press?FitPins ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040F120MNF1PG

Marking：NXH040F120MNF1PG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1 package. Features ?40m/1200VSiCMOSFETHalf?Bridge ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM ?Press?FitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040F120MNF1PTG

Marking：NXH040F120MNF1PTG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1package. Features ?40m/1200VSiCMOSFETHalf?Bridge ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM ?Press?FitPins ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040F120MNF1PTG

Marking：NXH040F120MNF1PTG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1 package. Features ?40m/1200VSiCMOSFETHalf?Bridge ?Thermistor ?OptionswithPre?AppliedThermalInterfaceMaterial(TIM)and withoutPre?AppliedTIM ?Press?FitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040P120MNF1PG

Marking：NXH040P120MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features ?40m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionswithPre?appliedThermalInterfaceMaterial(TIM)and withoutPre?appliedTIM ?Press?fitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040P120MNF1PG

Marking：NXH040P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features ?40m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionswithPre?appliedThermalInterfaceMaterial(TIM)and withoutPre?appliedTIM ?Press?fitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040P120MNF1PTG

Marking：NXH040P120MNF1PTG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features ?40m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionswithPre?appliedThermalInterfaceMaterial(TIM)and withoutPre?appliedTIM ?Press?fitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH040P120MNF1PTG

Marking：NXH040P120MNF1PTG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features ?40m/1200VSiCMOSFETHalfBridge ?Thermistor ?OptionswithPre?appliedThermalInterfaceMaterial(TIM)and withoutPre?appliedTIM ?Press?fitPins

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NXH100B120H3Q0PG

Marking：NXH100B120H3Q0PG；Package：Q0BOOST；Dual Boost Power Module

TheNXH100B120H3Q0isapowermodulecontainingadualboost stage.TheintegratedfieldstoptrenchIGBTsandSiCDiodesprovide lowerconductionlossesandswitchinglosses,enablingdesignersto achievehighefficiencyandsuperiorreliability. Features ?1200VUltraFieldStopIGBTs ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    NX

  • 制造商：

    Hirose

  • 功能描述：

    902-0250-4-00 EACH

  • 功能描述：

    NX/3230-CAT

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正品:QQ;2987726803
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原裝正品老板王磊+13925678267
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更多NX供應(yīng)商 更新時間2025-6-27 16:28:00

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