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PH1214-300M

Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10 Duty

Features ■NPNSiliconMicrowavePowerTransistor ■CommonBaseConfiguration ■BroadbandClassCOperation ■HighEfficiencyInterdigitatedGeometry ■GoldMetalizationSystem ■InternalInputandOutputImpedanceMatching ■HermeticMetal/CeramicPackage

MACOM

Tyco Electronics

PH1214-300M

Radar Pulsed Power Transistor

Features ?NPNsiliconmicrowavepowertransistors ?Commonbaseconfiguration ?BroadbandClassCoperation ?Highefficiencyinter-digitizedgeometry ?Diffusedemitterballastingresistors ?Goldmetallizationsystem ?Internalinputandoutputimpedancematching ?Hermeticmetal/cerami

MA-COM

M/A-COM Technology Solutions, Inc.

PH1214-300M

Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150關(guān)s Pulse, 10 Duty

MACOM

Tyco Electronics

PH1214-300M_17

Radar Pulsed Power Transistor

MA-COM

M/A-COM Technology Solutions, Inc.

1214-300

300Watts-50Volts,100us,10Radar12001400MHz

GENERALDESCRIPTION The1214-300isaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecifi

ADPOW

Advanced Power Technology

1214-300M

300Watts-40Volts,150ms,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif

ADPOW

Advanced Power Technology

1214-300M

300Watts-40Volts,150關(guān)s,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1214-300V

300Watts-50Volts,330關(guān)s,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Visaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratthreehundredthirtymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspe

MicrosemiMicrosemi Corporation

美高森美美高森美公司

AM1214-300

L-BANDRADARAPPLICATIONSRF&MICROWAVETRANSISTORS

DESCRIPTION TheAM1214-300deviceisahighpowertransistorspecificallydesignedforL-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■ME

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM1214-300

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIAM1214-300isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: ?InternalInput/OutputMatchingNetwork ?CommonBase ?PG=6.5dbat325W/1400MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    PH1214-300M

  • 制造商：

    M/A-COM Technology Solutions

  • 功能描述：

    TRANS GP BJT NPN 90V 2PIN HERMETIC METAL - Bulk

  • 功能描述：

    RF POWER TRANSISTOR BIPOLAR/HBT

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M/A-COM
24+
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3000
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MA-COM
19+
A/N
1000
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M/A-COM
2019+
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6992
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M/A-COM
23+
高頻管
3200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
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M/A-COM
23+
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9960
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m/a-com
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1585
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MACOM
2020+
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5000
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M/A-COM
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200
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10
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M/A-COM
23+
TO-59
8510
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更多PH1214-300M供應(yīng)商 更新時(shí)間2025-1-28 14:32:00

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