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RFP4N100

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

TheRFP4N100andRFP4N100SMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesignedforuseinapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhig

Intersil

Intersil Corporation

RFP4N100

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

TheRFP4N100andRFP4N100SMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesignedforuseinapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhig

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

4N100-FC

null4.0A,1000VN-CHANNELPOWERMOSFET

?DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A *LowReverseTransferCapacitance *FastSwitchingCapabi

UTCUnisonic Technologies

友順友順科技股份有限公司

DAM4N100L

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

IXFA4N100P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFA4N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFA4N100P

PowerMOSFET

IXYS

IXYS Corporation

IXFA4N100Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped

IXYS

IXYS Corporation

IXFA4N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH4N100

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXFH4N100Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXFH4N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP4N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP4N100P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFP4N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP4N100P

PowerMOSFET

IXYS

IXYS Corporation

IXFP4N100PM

PolarHiperFETPowerMOSFET

IXYS

IXYS Corporation

IXFP4N100Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped

IXYS

IXYS Corporation

IXFP4N100Q

HiperFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFP4N100QM

HiPerFETPowerMOSFETQ-Class

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    RFP4N100

  • 功能描述：

    MOSFET TO-220AB N-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC
23+
TO-220
685000
詢價
INTERSIL/FSC
23+
TO-220
28610
詢價
哈里斯
05+
TO-220
3000
自己公司全新庫存絕對有貨
 詢價
HAR
24+
N/A
2900
詢價
FSC
17+
TO-220
6200
詢價
哈里斯
23+
TO263
4500
專業(yè)優(yōu)勢供應
 詢價
NJS
11
624
原裝正品
 詢價
FAIRCHI
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
哈里斯
19+20+
TO220
10095
全新原裝房間現(xiàn)貨 可長期供貨
 詢價
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
 詢價
更多RFP4N100供應商 更新時間2025-1-10 9:19:00

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