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RJH60D0DPK

Silicon N Channel IGBT Application: Inverter

Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPK

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=22A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RJH60D0DPK-00-T0

Silicon N Channel IGBT Application: Inverter

Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPK_10

Silicon N Channel IGBT Application: Inverter

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPK_15

600V - 22A - IGBT Application: Inverter

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPK-00#T0

Package：TO-220-3 整包；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 45A 140W TO3P

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

RJH60D0DPM

SiliconNChannelIGBTApplication:Inverter

Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPE

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPM

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    RJH60D0DPK

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel IGBT

  • Application：

    Inverter

供應(yīng)商型號品牌批號封裝庫存備注價格
瑞薩
14
N/A
360
只做原裝
 詢價
RENESAS
22+
TO-3P
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
RENESAS/瑞薩
2316+
TO-3P
3668
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
RENESAS
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Renesas
2018+
TO-3P
6528
承若只做進(jìn)口原裝正品假一賠十!
 詢價
RENESAS/瑞薩
22+
TO-3P
20000
保證原裝正品,假一陪十
 詢價
RENESAS/瑞薩
21+
TO-3P
1062
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
 詢價
原裝
1923+
TO-3P
8900
公司庫存原裝低價格歡迎實單議價
 詢價
瑞薩
23+
TO-247
10000
公司只做原裝,假一罰十
 詢價
瑞薩
23+
TO3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多RJH60D0DPK供應(yīng)商 更新時間2025-1-25 17:24:00

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