RJH60D2DPP-M0-T2中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Silicon N Channel IGBT Application: Inverter

Features

Short circuit withstand time (5μs typ.)

Low collector to emitter saturation voltage

VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C)

Built in fast recovery diode (100 ns typ.) in one package

Trench gate and thin wafer technology

High speed switching

tf= 80 ns typ. (at VCC= 300 V, VGE= 15 V, IC= 12 A, Rg = 5 ?, Ta = 25°C, inductive load)