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SIHP17N60D

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.34?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHP17N60D

D Series Power MOSFET

FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP17N60D

D Series Power MOSFET

FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP17N60D_V01

D Series Power MOSFET

FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP17N60D-E3

D Series Power MOSFET

FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHP17N60D-GE3

D Series Power MOSFET

FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

17N60

FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP17N60N

N-ChannelMOSFET600V,17A,0.34廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP17N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.34mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDPF17N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=17A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.34Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    SIHP17N60D

  • 功能描述：

    MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
TO-220AB
10000
公司只做原裝正品
 詢價
VISHAY/威世
2022+
TO-220
50000
原廠代理 終端免費提供樣品
 詢價
fairchild
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY/威世
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
VISHAY/威世
20+
TO-220
7500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價
Vishay
24+
TO-TO-220AB
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
VISHAY
20+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
VB
21+
TO-
10000
原裝現(xiàn)貨假一罰十
 詢價
VISHAY/威世
23+
TO-220AB-3
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
VISHAY
21+
TO-220
9866
詢價
更多SIHP17N60D供應(yīng)商 更新時間2025-2-9 14:30:00

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