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SPP02N80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·IndustrialwithhighDCbulkvoltage ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP02N80C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3_08

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CJP02N80

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJP02N80

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJU02N80

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CJU02N80

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

SSRF02N80SL

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細(xì)參數(shù)

  • 型號：

    SPP02N80

  • 功能描述：

    MOSFET COOL MOS N-CH 800V 2A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
T0-220
7936
詢價
Infineo
2020+
TO-220
70
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON
2016+
TO220
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
Infineon
17+
TO-220
6200
詢價
SP
TO263
27413
只做原裝貨值得信賴
 詢價
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
INFINEON
22+
TO-220
36448
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
INFINEON
24+
TO220
2568
原裝優(yōu)勢!絕對公司現(xiàn)貨
 詢價
SP
24+
TO263
20000
一級代理原裝現(xiàn)貨假一罰十
 詢價
更多SPP02N80供應(yīng)商 更新時間2025-1-11 15:16:00

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