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SPP04N60C2

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP04N60C2

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

04N60C2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

04N60C2

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPA04N60C2

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA04N60C2

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPB04N60C2

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPB04N60C2

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD04N60C2

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN04N60C2

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inSOT223 ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPP04N60C2

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
INFINEON
24+
TO-220
250
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
infineon technologies
23+
NA
25987
原裝現(xiàn)貨 庫存特價(jià)/長期供應(yīng)元器件代理經(jīng)銷
 詢價(jià)
infineon
24+
P-TO220-3-1
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
TOSHIBA/東芝
23+
TO-251
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
I
22+
P-TO220-3-1
6000
十年配單,只做原裝
 詢價(jià)
Infineon(英飛凌)
22+
NA
7000
原廠原裝現(xiàn)貨
 詢價(jià)
更多SPP04N60C2供應(yīng)商 更新時(shí)間2025-1-25 16:12:00

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