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SST34HF1621-70-4E-LFP中文資料SST數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
SST34HF1621-70-4E-LFP |
功能描述 | 16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory |
文件大小 |
486.7 Kbytes |
頁面數(shù)量 |
32 頁 |
生產(chǎn)廠商 | Silicon Storage Technology, Inc |
企業(yè)簡稱 |
SST |
中文名稱 | Silicon Storage Technology, Inc官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-5-21 23:00:00 |
人工找貨 | SST34HF1621-70-4E-LFP價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
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SST34HF1621-70-4E-LFP規(guī)格書詳情
PRODUCT DESCRIPTION
The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.
FEATURES:
? Flash Organization: 1M x16
? Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 12 Mbit + 4 Mbit
? SRAM Organization:
– 2 Mbit: 256K x8 or 128K x16
– 4 Mbit: 512K x8 or 256K x16
? Single 2.7-3.3V Read and Write Operations
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 μA (typical)
? Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
? Sector-Erase Capability
– Uniform 1 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Read Access Time
– Flash: 70 and 90 ns
– SRAM: 70 and 90 ns
? Latched Address and Data
? Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 μs (typical)
– Chip Rewrite Time: 8 seconds (typical)
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? JEDEC Standard Command Set
? Conforms to Common Flash Memory Interface (CFI)
? Packages Available
– 56-ball LFBGA (8mm x 10mm)
產(chǎn)品屬性
- 型號:
SST34HF1621-70-4E-LFP
- 制造商:
SST
- 制造商全稱:
Silicon Storage Technology, Inc
- 功能描述:
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
4250 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
SST |
23+ |
TFBGA |
20000 |
全新原裝假一賠十 |
詢價 | ||
SST/超捷 |
25+ |
原廠原封可拆樣 |
54687 |
百分百原裝現(xiàn)貨 實單必成 |
詢價 | ||
SST |
23+ |
BGA |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
SST |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
2023+ |
12000 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||||
SST |
22+ |
BGA |
3000 |
原裝正品,支持實單 |
詢價 | ||
SST |
24+ |
BGA |
6000 |
全新原裝,一手貨源,全場熱賣! |
詢價 | ||
SST |
23+ |
BGA |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
SST |
24+ |
BGA |
2978 |
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨 |
詢價 |