首頁>SST34HF1621-70-4E-LFP>規(guī)格書詳情

SST34HF1621-70-4E-LFP中文資料SST數(shù)據(jù)手冊PDF規(guī)格書

SST34HF1621-70-4E-LFP
廠商型號

SST34HF1621-70-4E-LFP

功能描述

16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory

文件大小

486.7 Kbytes

頁面數(shù)量

32

生產(chǎn)廠商 Silicon Storage Technology, Inc
企業(yè)簡稱

SST

中文名稱

Silicon Storage Technology, Inc官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-5-21 23:00:00

人工找貨

SST34HF1621-70-4E-LFP價格和庫存,歡迎聯(lián)系客服免費人工找貨

SST34HF1621-70-4E-LFP規(guī)格書詳情

PRODUCT DESCRIPTION

The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:

? Flash Organization: 1M x16

? Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 12 Mbit + 4 Mbit

? SRAM Organization:

– 2 Mbit: 256K x8 or 128K x16

– 4 Mbit: 512K x8 or 256K x16

? Single 2.7-3.3V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 μA (typical)

? Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

? Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

? Sector-Erase Capability

– Uniform 1 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Read Access Time

– Flash: 70 and 90 ns

– SRAM: 70 and 90 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 μs (typical)

– Chip Rewrite Time: 8 seconds (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

? CMOS I/O Compatibility

? JEDEC Standard Command Set

? Conforms to Common Flash Memory Interface (CFI)

? Packages Available

– 56-ball LFBGA (8mm x 10mm)

產(chǎn)品屬性

  • 型號:

    SST34HF1621-70-4E-LFP

  • 制造商:

    SST

  • 制造商全稱:

    Silicon Storage Technology, Inc

  • 功能描述:

    16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
SST
24+
NA/
4250
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
SST
23+
TFBGA
20000
全新原裝假一賠十
詢價
SST/超捷
25+
原廠原封可拆樣
54687
百分百原裝現(xiàn)貨 實單必成
詢價
SST
23+
BGA
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
SST
21+
BGA
10000
原裝現(xiàn)貨假一罰十
詢價
2023+
12000
進(jìn)口原裝現(xiàn)貨
詢價
SST
22+
BGA
3000
原裝正品,支持實單
詢價
SST
24+
BGA
6000
全新原裝,一手貨源,全場熱賣!
詢價
SST
23+
BGA
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
SST
24+
BGA
2978
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨
詢價