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STB8N65M5

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB8N65M5

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD8N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD8N65M5

aPhase-Dimmable,Primary-SideRegulatedLEDDriver

TI1Texas Instruments

德州儀器

STF8N65M5

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI8N65M5

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=7A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STI8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL8N65M5

N-channel650V,0.56,7AMDmeshVPowerMOSFETinPowerFLAT5x5

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STB8N65M5

  • 功能描述：

    MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
TO263
8950
BOM配單專(zhuān)家,發(fā)貨快,價(jià)格低
 詢價(jià)
ST/意法半導(dǎo)體
22+
TO-263-3
6001
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢價(jià)
ST/意法半導(dǎo)體
2023
TO-263-3
6000
公司原裝現(xiàn)貨/支持實(shí)單
 詢價(jià)
ST
1706+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
STMicroelectronics
18+
NA
3146
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ST原裝
22+23+
TO-263
24214
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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ST原裝
24+
TO-263
9860
一級(jí)代理
 詢價(jià)
ST
23+
TO-263
20000
原廠原裝正品現(xiàn)貨
 詢價(jià)
STMicroelectronics
21+
D2PAK
1000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
ST
2023+
TO-263
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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更多STB8N65M5供應(yīng)商 更新時(shí)間2025-1-27 16:36:00

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