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STG60H65FBD7中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STG60H65FBD7
廠商型號(hào)

STG60H65FBD7

功能描述

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

文件大小

428.48 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 23:00:00

STG60H65FBD7規(guī)格書詳情

Features

? Maximum junction temperature: TJ = 175 °C

? High speed switching series

? Minimized tail current

? Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A

? Safe paralleling

? Tight parameter distribution

Applications

? Solar

? Welding

? High frequency converter

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

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