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首頁>TJ8S06M3L(T6L1,NQ)>芯片詳情
TJ8S06M3L(T6L1,NQ)_NKGLBDT/南科功率半導(dǎo)體_MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104南科功率半導(dǎo)
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
TJ8S06M3L(T6L1,NQ)
- 功能描述:
MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市南科功率半導(dǎo)體有限公司
- 商鋪:
- 聯(lián)系人:
柯經(jīng)理
- 手機(jī):
18529599598
- 詢價(jià):
- 電話:
0755-82550454
- 傳真:
0755-82550454
- 地址:
深圳市福田區(qū)華強(qiáng)北新華強(qiáng)H4C003
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