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型號：1SMA17CA；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

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型號：2SA1807；Package：CPT3；High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)

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型號：2SA1870；Package：PSD3；High-speed Switching Transistor (-60V, -12A)

High-speedSwitchingTransistor(-60V,-12A)

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型號：2SA1952；Package：CPT3；High-speed Switching Transistor (-60V, -5A)

Features 1)SuitableforMiddlePowerDriver 2)ComplementaryNPNTypes:2SC5103 3)LowVCE(sat) VCE(sat)=-0.3V(Max.)(IC/IB=-3A/-0.15A) VCE(sat)=-0.5V(Max.)(IC/IB=-4A/-0.2A) 4)LeadFree/RoHSCompliant. Applications Motordriver,LEDdriver Powersupply

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型號：2SB1182；Package：CPT3；Medium power Transistor(-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

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型號：2SB1260；Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=?80V,IC=?1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

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型號：2SB1275；Package：CPT3；Power Transistor (-160V , -1.5A)

Features 1)Highbreakdownvoltage.(BVCEO=-160V) 2)Lowcollectoroutputcapacitance. (Typ.30pFatVCB=10V) 3)Hightransitionfrequency.(fT=50MHZ) 4)Complementsthe2SD1918/2SD1857A.

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型號：2SB1316；Package：CPT3；Power Transistor (−100V , −2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

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型號：2SB1412；Package：CPT3；Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

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型號：2SB1474；Package：CPT3；Power Transistor (-80V, -4A)

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)