VS-C12ET07T-M3_V01中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FEATURES

? Majority carrier diode using Schottky technology

on SiC wide band gap material

? Positive VF temperature coefficient for easy

paralleling

? Virtually no recovery tail and no switching losses

? Temperature invariant switching behavior

? 175 °C maximum operating junction temperature

? MPS structure for high ruggedness to forward current

surge events

? Meets JESD 201 class 1A whisker test

? Solder Bath temperature 275 °C maximum, 10 s per

JESD 22-B106

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

Wide band gap SiC based 650 V Schottky diode, designed

for high performance and ruggedness.

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC

converters.

MECHANICAL DATA

Case: 2L TO-220AC

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Mounting torque: 10 in-lbs maximum