零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
XUY718 | IDT XO LVPECL Crystal Oscillator | IDT Integrated Device Technology, Inc. | IDT | |
CERAMICRESONATORS ZTBSERIES700kHzto999kHz | EUROQUARTZEUROQUARTZ limited 石英公司歐洲石英公司 | EUROQUARTZ | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *6APeakpulsecurrent *ExcellenthFEcharacteristicsupto6A(pulsed) *lowsaturationvoltage *ICCont2.5A APPLICATIONS *PowerMOSFETgatedriverinconjunctionwithcomplementaryZTX618 | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *6APeakpulsecurrent *ExcellenthFEcharacteristicsupto6A(pulsed) *lowsaturationvoltage *ICCont2.5A APPLICATIONS *PowerMOSFETgatedriverinconjunctionwithcomplementaryZTX618 | Zetex Zetex Semiconductors | Zetex | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpTo3A(pulsed) *ExtremelyLowSaturationVoltage *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *SwitchfunctionsinLEDdisplaysandSatellitereceivers *Negativ | Zetex Zetex Semiconductors | Zetex | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT | DIODES Diodes Incorporated | DIODES | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT | DIODES Diodes Incorporated | DIODES | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT | DIODES Diodes Incorporated | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits ?BVCEO>-20V; ?IC=-3.5AContinuousCollectorCurrent ?RSAT=64m?forLowEquivalentOnResistance ?LowSaturationVoltage(-220mV@-1A) ?hFEcharacterizedupto-6Aforhighcurrentgainholdsup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile | DIODES Diodes Incorporated | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits ?BVCEO>-20V; ?IC=-3.5AContinuousCollectorCurrent ?RSAT=64m?forLowEquivalentOnResistance ?LowSaturationVoltage(-220mV@-1A) ?hFEcharacterizedupto-6Aforhighcurrentgainholdsup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile | DIODES Diodes Incorporated | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA | DIODES Diodes Incorporated | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA | DIODES Diodes Incorporated | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA | DIODES Diodes Incorporated | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40 | DIODES Diodes Incorporated | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40 | DIODES Diodes Incorporated | DIODES |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TELEMECANIQUE |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
Telemecanique |
22+ |
Na |
1208 |
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴! |
詢價 |
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