首頁 >IC-224(ELCOM)>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TimingGeneratorforFrameReadoutCCDImageSensor Description TheCXD2470RisatiminggeneratorICwhichgeneratesthetimingpulsesforperformingframereadoutusingtheICX224,ICX284,ICX202andICX232CCDimagesensor. Features ?Baseoscillationfrequency24.00to36.00MHz(max.) ?High-speed/low-speedshutterfunction ?Supportsquadru | SonySony Corporation 索尼 | Sony | ||
TimingGeneratorandSignalProcessorforFrameReadoutCCDImageSensor Description TheCXD3410GAisatiminggeneratorandCCDsignalprocessorICfortheICX202/232,ICX224/284CCDimagesensor. Features ?Timinggeneratorfunctions ?Horizontaldrivefrequency12to18MHz(Baseoscillationfrequency24to36MHz) ?Supportsframereadout/draft(quad | SonySony Corporation 索尼 | Sony | ||
Diagonal8mm(Type1/2)FrameReadoutCCDImageSensorwithSquarePixelforColorCameras | SonySony Corporation 索尼 | Sony | ||
Diagonal8mm(Type1/2)FrameReadoutCCDImageSensorwithSquarePixelforColorCameras | SonySony Corporation 索尼 | Sony | ||
Diagonal8mm(Type1/2)FrameReadoutCCDImageSensorwithSquarePixelforColorCameras | SonySony Corporation 索尼 | Sony | ||
Diagonal8mm(Type1/2)FrameReadoutCCDImageSensorwithSquarePixelforColorCameras | SonySony Corporation 索尼 | Sony | ||
HEXFETTRANSISTORS 250V1.1ohmHEXFET | IRF International Rectifier | IRF | ||
HighSpeedApplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=0.63A) VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=250V,RDS(on)=1.1廓,ID=0.63A) VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)
| IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
替換型號
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
KDS |
24+ |
SMD |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
KDS |
SMD |
258 |
全新、原裝 |
詢價 | |||
DIP-20 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
原裝CONAIR |
2023+ |
DIP-20 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
CONAIR |
23+ |
DIP20 |
28533 |
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價格美麗 假一罰十! |
詢價 | ||
CONAIR |
23+ |
DIP20 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
原裝CONAIR |
23+ |
DIP-20 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
原裝CONAIR |
23+ |
DIP-20 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
GENERIC |
新 |
8996 |
全新原裝 貨期兩周 |
詢價 | |||
PHI |
24+ |
QFP64 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 |
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