| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IP5305T | support High and low voltage SCP, two-way PD3.0 and other mobile power SOCs with all fast charging protocols characteristic SupportmultipleUSBportsatthesametime ?2USBAportoutputs ?1USBBportinput ?1USBCportinputandoutput ?1lightninginputport Fastchargingspecifications ?Anyportsupportsfastcharging ?IntegratedQC2.0/QC3.0outputfastchargingprotocol ?Integra | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | |
IP5305T | Supports two-way SCP, VOOC, PD3.0 and other fast charging protocols, supports 2~5 cells in series Integrated buck-boost driver, maximum power 100W mobile power supply SOC characteristic SupportmultipleUSBportsatthesametime ?2USBAportoutputs ?1USBCportinput/output ?1USBBportorLightningportinputorCportinput/output out Fastchargingspecifications ?Anyportsupportsfastcharging ?IntegratedQC2.0/QC3.0/QC3+outputfastchargin | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | |
IP5305T | 1.2A Charging 1.0 A Discharge Highly Integrated Mobile Power SOC | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | |
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.06ohm,Id=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
-55VP-ChannelMOSFET Features VDS(V)=-55V ID=-31A(VGS=-10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.06ohm,Id=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology
| KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET
| IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
-60VP-ChannelMOSFET Features *VDS(V)=-60V *ID=-31A(VGS=-10V) *RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.06ohm,Id=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
-55VP-ChannelMOSFET Features VDS(V)=-55V ID=-31A(VGS=-10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INJOINIC |
19+ |
ESOP-8 |
12000 |
原廠原裝一級代理 |
詢價 | ||
英集芯 |
24+ |
ESOP8 |
4000 |
原裝正品支持樣品批量訂貨方案支持 |
詢價 | ||
IP |
23+ |
SOP8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
英集芯 |
標(biāo)準(zhǔn)封裝 |
21+ |
10000 |
原裝手機(jī)/微信17621580780/QQ2107571078于小姐 |
詢價 | ||
IP |
2022 |
SOP8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
2022+ |
ESOP8 |
8600 |
英瑞芯只做原裝正品 |
詢價 | |||
INJOINI |
23+ |
SOP-8 |
86000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
INJOINIC |
21+ |
N/A |
2500 |
進(jìn)口原裝,優(yōu)勢現(xiàn)貨 |
詢價 | ||
INJOINIC |
19+ |
SOP-8 |
458 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
英集芯/INJOINIC |
2023+ |
ESOP8 |
12000 |
全新原裝正品,優(yōu)勢價格 |
詢價 |
