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MF1302

AxialMoldedChoke

TheMFrangeofencapsulatedaxialchokesfromECMhavebeenespecificallydesignedtocopewithhighcurrentattemperaturesupto125°C,withminimumppm/°Closses. Itsphysicalconstruction,whilenotofferingcompleteEMIshielding,generatesextremelylowmagneticinterferenceandhasaty

ECM

ECM Electronics Limited.

MGF1302

LOWNOISEGaAsFET

DESCRIPTION TheMGF1302isalow-noiseGaAsFETwithanN-channelSchottkygate,whichisdesignedforuseinStoXbandamplifiersandoscillators.Thehermeticallysealedmetal-ceramicpackageassuresminimumparasiticlosses,andhasaconfigurationsuitableformicrostripcircuits. FEATURES

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

MJ1302A

COMEPLEMENTARYNPN-PNPSILICONPOWERBOPOLARTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJL1302

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN ?TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. ?Designedfor100WAudioFrequency ?Gai

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJL1302

COMPLEMENTARYSILICONPOWERTRANSISTORS

15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS MJL3281A(NPN) MJL1302A(PNP) TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinear Features ?ExceptionalSafeOperatingArea ?NPN/PNPGai

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJL1302A

COMPLEMENTARYSILICONPOWERTRANSISTORS

15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS MJL3281A(NPN) MJL1302A(PNP) TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinear Features ?ExceptionalSafeOperatingArea ?NPN/PNPGai

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJL1302A

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN ?TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. ?Designedfor100WAudioFrequency ?Gai

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJL1302A

15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJL1302A

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJL1302A

ComplementaryBipolarPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRF1302S

  • 功能描述:

    MOSFET N-CH 20V 174A D2PAK

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-263
14150
只做原廠渠道 可追溯貨源
詢價(jià)
IR
22+
TO-263
9450
原裝正品,實(shí)單請(qǐng)聯(lián)系
詢價(jià)
IR
17+
D2-Pak
31518
原裝正品 可含稅交易
詢價(jià)
IR
24+
TO-263
501252
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
INFINEON/英飛凌
11+
TO-263
16685
原裝進(jìn)口無鉛現(xiàn)貨
詢價(jià)
IR
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
詢價(jià)
IR
23+
D2-Pak
7600
全新原裝現(xiàn)貨
詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多IRF1302S供應(yīng)商 更新時(shí)間2025-6-21 16:36:00