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IRF1405LPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405PBF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=5.3m? ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS

IRF

International Rectifier

IRF1405PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405S

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405S

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1405SLPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半導體

IRF1405SPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1405ZL

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZLPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRF1405LPBF

  • 功能描述:

    MOSFET MOSFT 55V 131A 5.3mOhm 170nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
IR
24+
TO-262-3
2032
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
詢價
IR
2020+
TO-220
100
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
22+23+
TO-262
26964
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
IR
2020+
TO-262
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價
IR
24+
TO-262
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
更多IRF1405LPBF供應商 更新時間2025-1-7 18:34:00