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IRF530S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530S

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF530S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530S

HEXFET Power MOSFET

IRF

International Rectifier

IRF530S

Halogen-free According to IEC 61249-2-21

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530S

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRF530S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530SPBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRF530STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530STRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRF530S

  • 功能描述:

    MOSFET N-Chan 100V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
D2-PAK
9450
原裝正品,實單請聯(lián)系
詢價
IR
06+
TO-263
10000
自己公司全新庫存絕對有貨
詢價
IR
2004
177
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
23+
TO-263
35890
詢價
IR
24+
D2-Pak
8866
詢價
IR
16+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
詢價
IR
24+
NA
6980
原裝現(xiàn)貨,可開13%稅票
詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
I
24+
T0-263
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
更多IRF530S供應(yīng)商 更新時間2025-1-9 17:34:00