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IRF540N

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve

Intersil

Intersil Corporation

IRF540N

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF540N

N-Channel Mosfet Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.044? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540N

Advanced Process Technology

VDSS=100V RDS(on)=44m? ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540N

33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF540N

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540N

SEMICONDUCTORS

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etc未分類制造商etc2未分類制造商

IRF540NL

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

IRF

International Rectifier

IRF540NL

Ultra Low On-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540NL

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF540N

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N TO-220

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
13+
TO-220/TO-263
50000
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列原裝正品,公司大量現(xiàn)貨供應(yīng),歡迎咨詢洽談。
 詢價(jià)
IR
新
進(jìn)口原裝
3000
庫(kù)存現(xiàn)貨
 詢價(jià)
IR
24+
TO-220
20000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
IR
2020+
TO-220
58000
原裝正品,誠(chéng)信經(jīng)營(yíng)。
 詢價(jià)
IR
2020+
TO-220
6000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IR
22+
TO-220
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
IR
21+
TO-220
20000
只做原裝,質(zhì)量保證
 詢價(jià)
ST/意法
22+
TO-220
800000
原裝正品
 詢價(jià)
IR
24+
TO220
9425
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
 詢價(jià)
IR
2024+
TO-220
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
更多IRF540N供應(yīng)商 更新時(shí)間2025-1-24 11:04:00

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