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IRF820ASPBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820ASPBF

HEXFET Power MOSFET

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching ?Lead-Free Benefits ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheV

IRF

International Rectifier

IRF820ASPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF820L

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF820PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820S

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalanche

IRF

International Rectifier

IRF820S

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820S

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820SPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF820SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI820A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):2.000?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI820B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI820G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRF820ASPBF

  • 功能描述:

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
VISHAY
23+
D2Pak
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
ir
24+
原裝
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
VISHAY/威世
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
IR
1923+
TO-263
6896
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
詢價(jià)
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
詢價(jià)
更多IRF820ASPBF供應(yīng)商 更新時(shí)間2025-1-7 22:28:00